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| STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type STW11NK90Z VDSS 900V RDS(on) <0.98 ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247 Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products Internal schematic diagram Applications Switching application Order codes Part number STW11NK90Z Marking W11NK90Z Package TO-247 Packaging Tube July 2006 Rev 2 1/12 www.st.com 12 Contents STW11NK90Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 5 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW11NK90Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 900 900 30 9.2 5.8 36.8 200 1.51 6000 4.5 -55 to 150 Unit V V V A A A W W/C V V/ns C PTOT VESD(G-D) dv/dt TJ Tstg (2) Gate source ESD(HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD < 9.2A, di/dt < 200A/s, VDD =80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-a Tl Thermal resistance Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.66 50 300 Unit C/W C/W C Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 9.2 400 Unit A mJ 3/12 Electrical characteristics STW11NK90Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 100A VGS= 10V, ID= 4.6A 3 3.75 0.82 Min. 900 1 50 10 Typ. Max. Unit V A A A V 4.5 0.98 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 4.6A Min. Typ. 11 3000 240 48 83 95 14 49 115 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 720V VDD=720V, ID = 9.2A VGS =10V (see Figure 14) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=450 V, ID= 4.6A, RG=4.7, VGS=10V (see Figure 13) Min. Typ. 30 19 76 50 Max. Unit ns ns ns ns 4/12 STW11NK90Z Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9.2A, VGS=0 ISD=9.2A, di/dt = 100A/s, VDD=50V, Tj=25C (see Figure 18) ISD=9.2A, di/dt = 100A/s, VDD=50V, Tj=150C (see Figure 18) 584 6 21 Test conditions Min. Typ. Max. 9.2 36.8 1.6 Unit A A V ns C A Reverse recovery time Reverse recovery charge Reverse recovery current 790 8.7 22 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Table 8. Symbol BVGSO(1) 1. Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=1mA (open drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/12 Electrical characteristics STW11NK90Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STW11NK90Z Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Maximum avalanche energy vs temperature 7/12 Test circuits STW11NK90Z 3 Test circuits Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STW11NK90Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STW11NK90Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 10/12 STW11NK90Z Revision history 5 Revision history Table 9. Date 30-Mar-2006 25-Jul-2006 Revision history Revision 1 2 First release Modified value on Avalanche data Changes 11/12 STW11NK90Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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